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ITEP MEVVA ion beam for rhenium silicide production.
Kulevoy, T; Gerasimenko, N; Seleznev, D; Kropachev, G; Kozlov, A; Kuibeda, R; Yakushin, P; Petrenko, S; Medetov, N; Zaporozhan, O.
Affiliation
  • Kulevoy T; Institute for Theoretical and Experimental Physics, Moscow 117218, Russia. kulevoy@itep.ru
Rev Sci Instrum ; 81(2): 02B905, 2010 Feb.
Article in En | MEDLINE | ID: mdl-20192471
ABSTRACT
The rhenium silicides are very attractive materials for semiconductor industry. In the Institute for Theoretical and Experimental Physics (ITEP) at the ion source test bench the research program of rhenium silicide production by ion beam implantation are going on. The investigation of silicon wafer after implantation of rhenium ion beam with different energy and with different total dose were carried out by secondary ions mass spectrometry, energy-dispersive x-ray microanalysis, and x-ray diffraction analysis. The first promising results of rhenium silicide film production by high intensity ion beam implantation are presented.

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Rev Sci Instrum Year: 2010 Document type: Article Affiliation country: Rusia

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Rev Sci Instrum Year: 2010 Document type: Article Affiliation country: Rusia
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