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Contact behavior of focused ion beam deposited Pt on p-type Si nanowires.
Ho, C Y; Chiu, S H; Ke, J J; Tsai, K T; Dai, Y A; Hsu, J H; Chang, M L; He, J H.
Affiliation
  • Ho CY; Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan.
Nanotechnology ; 21(13): 134008, 2010 Apr 02.
Article in En | MEDLINE | ID: mdl-20208118
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanotechnology Year: 2010 Document type: Article Affiliation country: Taiwán Country of publication: Reino Unido
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanotechnology Year: 2010 Document type: Article Affiliation country: Taiwán Country of publication: Reino Unido