Record Endurance for Single-Walled Carbon Nanotube-Based Memory Cell.
Nanoscale Res Lett
; 5(11): 1852-1855, 2010 Aug 14.
Article
in En
| MEDLINE
| ID: mdl-21124628
ABSTRACT
We study memory devices consisting of single-walled carbon nanotube transistors with charge storage at the SiO(2)/nanotube interface. We show that this type of memory device is robust, withstanding over 10(5) operating cycles, with a current drive capability up to 10(-6) A at 20 mV drain bias, thus competing with state-of-the-art Si-devices. We find that the device performance depends on temperature and pressure, while both endurance and data retention are improved in vacuum.
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Nanoscale Res Lett
Year:
2010
Document type:
Article