The growth and characterization of ZnO/ZnTe core-shell nanowires and the electrical properties of ZnO/ZnTe core-shell nanowire field effect transistor.
J Nanosci Nanotechnol
; 11(3): 2042-6, 2011 Mar.
Article
in En
| MEDLINE
| ID: mdl-21449346
ABSTRACT
Vertically aligned ZnO/ZnTe core-shell nanowires were grown on a-plane sapphire substrate by using chemical vapor deposition with gold as catalyst for the growth of ZnO core and then followed by growing ZnTe shell using metal-organic chemical vapor deposition (MOCVD). Transmission electron microscope (TEM) and Raman scattering indicate that the core-shell nanostructures have good crystalline quality. Three-dimensional fluorescence images obtained by using laser scanning confocal microscope demonstrate that the nanowires have good optical properties. The core-shell nanowire was then fabricated into single nanowire field effect transistor by standard e-beam photolithography. Electrical measurements reveals that the p-type ZnO/ZnTe FET device has a turn on voltage of -1.65 V and the hole mobility is 13.3 cm2/V s.
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Collection:
01-internacional
Database:
MEDLINE
Main subject:
Tellurium
/
Transistors, Electronic
/
Zinc Oxide
/
Nanostructures
Language:
En
Journal:
J Nanosci Nanotechnol
Year:
2011
Document type:
Article
Affiliation country:
Taiwán