Microscopic origin of electron accumulation in In2O3.
Phys Rev Lett
; 110(5): 056803, 2013 Feb 01.
Article
in En
| MEDLINE
| ID: mdl-23414041
ABSTRACT
Angle-resolved photoemission spectroscopy reveals the presence of a two-dimensional electron gas at the surface of In(2)O(3)(111). Quantized subband states arise within a confining potential well associated with surface electron accumulation. Coupled Poisson-Schrödinger calculations suggest that downward band bending for the conduction band must be much bigger than band bending in the valence band. Surface oxygen vacancies acting as doubly ionized shallow donors are shown to provide the free electrons within this accumulation layer. Identification of the origin of electron accumulation in transparent conducting oxides has significant implications in the realization of devices based on these compounds.
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Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Phys Rev Lett
Year:
2013
Document type:
Article
Affiliation country:
Reino Unido