Solution-processable LaZrOx/SiO2 gate dielectric at low temperature of 180 °C for high-performance metal oxide field-effect transistors. | ACS Appl Mater Interfaces;6(21): 18693-703, 2014 Nov 12. | MEDLINE

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Solution-processable LaZrOx/SiO2 gate dielectric at low temperature of 180 °C for high-performance metal oxide field-effect transistors.

Je, So Yeon; Son, Byeong-Geun; Kim, Hyun-Gwan; Park, Man-Young; Do, Lee-Mi; Choi, Rino; Jeong, Jae Kyeong.

Affiliation

Je SY; Department of Materials Science and Engineering, Inha University , Incheon 402-751, Korea.

ACS Appl Mater Interfaces ; 6(21): 18693-703, 2014 Nov 12.

Article in En | MEDLINE | ID: mdl-25285585

Key words

field-effect transistor; indium zinc oxide; lanthanum zirconium oxide; low temperature; silicon dioxide; solution process

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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Appl Mater Interfaces Journal subject: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Year: 2014 Document type: Article Country of publication: Estados Unidos

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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Appl Mater Interfaces Journal subject: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Year: 2014 Document type: Article Country of publication: Estados Unidos