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Self-rectifying performance in the sandwiched structure of Ag/In-Ga-Zn-O/Pt bipolar resistive switching memory.
Yan, Xiaobing; Hao, Hua; Chen, Yingfang; Shi, Shoushan; Zhang, Erpeng; Lou, Jianzhong; Liu, Baoting.
Affiliation
  • Yan X; College of Electron and Information Engineering, Hebei University, Baoding 071002, People's Republic of China ; The Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China.
  • Hao H; College of Electron and Information Engineering, Hebei University, Baoding 071002, People's Republic of China.
  • Chen Y; College of Electron and Information Engineering, Hebei University, Baoding 071002, People's Republic of China.
  • Shi S; College of Electron and Information Engineering, Hebei University, Baoding 071002, People's Republic of China.
  • Zhang E; College of Electron and Information Engineering, Hebei University, Baoding 071002, People's Republic of China.
  • Lou J; College of Electron and Information Engineering, Hebei University, Baoding 071002, People's Republic of China.
  • Liu B; Department of Physics, Hebei University, Baoding 071002, People's Republic of China.
Nanoscale Res Lett ; 9(1): 548, 2014.
Article in En | MEDLINE | ID: mdl-25294977
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanoscale Res Lett Year: 2014 Document type: Article Country of publication: Estados Unidos
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanoscale Res Lett Year: 2014 Document type: Article Country of publication: Estados Unidos