Effect of surface Si redistribution on the alignment of Ge dots grown on pit-patterned Si(001) substrates. | Nanotechnology;25(47): 475301, 2014 Nov 28. | MEDLINE

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Effect of surface Si redistribution on the alignment of Ge dots grown on pit-patterned Si(001) substrates.

Chen, Hung-Ming; Suen, Yuen-Wuu; Chen, Sao-Jie; Luo, Guang-Li; Lai, Yen-Pu; Chen, Shih-Ta; Lee, Chien-Hung; Kuan, Chieh-Hsiung.

Affiliation

Chen HM; Graduate Institute of Electronics Engineering and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, Republic of China.

Nanotechnology ; 25(47): 475301, 2014 Nov 28.

Article in En | MEDLINE | ID: mdl-25369731

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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanotechnology Year: 2014 Document type: Article Affiliation country: China Country of publication: Reino Unido

Search on Google

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanotechnology Year: 2014 Document type: Article Affiliation country: China Country of publication: Reino Unido