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Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions.
Zhang, Kun; Cao, Yan-ling; Fang, Yue-wen; Li, Qiang; Zhang, Jie; Duan, Chun-gang; Yan, Shi-shen; Tian, Yu-feng; Huang, Rong; Zheng, Rong-kun; Kang, Shi-shou; Chen, Yan-xue; Liu, Guo-lei; Mei, Liang-mo.
Affiliation
  • Zhang K; School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China. shishenyan@sdu.edu.cn yftian@sdu.edu.cn.
Nanoscale ; 7(14): 6334-9, 2015 Apr 14.
Article in En | MEDLINE | ID: mdl-25785667
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanoscale Year: 2015 Document type: Article Country of publication: Reino Unido
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanoscale Year: 2015 Document type: Article Country of publication: Reino Unido