ALD grown bilayer junction of ZnO:Al and tunnel oxide barrier for SIS solar cell.
Sol Energy Mater Sol Cells
; 117: 178-182, 2013 Oct.
Article
in En
| MEDLINE
| ID: mdl-26877596
ABSTRACT
Various metal oxides are probed as extrinsic thin tunnel barriers in Semiconductor Insulator Semiconductor solar cells. Namely Al2O3, ZrO2, Y2O3, and La2O3 thin films are in between n-type ZnOAl (AZO) and p-type Si substrates by means of Atomic Layer Deposition. Low reverse dark current-density as low as 3×10-7 A/cm2, a fill factor up to 71.3%, and open-circuit voltage as high as 527 mV are obtained, achieving conversion efficiency of 8% for the rare earth oxide La2O3. ZrO2 and notably Al2O3 show drawbacks in performance suggesting an adverse reactivity with AZO as also indicated by X-ray Photoelectron Spectroscopy.
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Sol Energy Mater Sol Cells
Year:
2013
Document type:
Article
Affiliation country:
Austria