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Plasma functionalization for cyclic transition between neutral and charged excitons in monolayer MoS2.
Kim, Y; Jhon, Y I; Park, J; Kim, C; Lee, S; Jhon, Y M.
Affiliation
  • Kim Y; Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea.
  • Jhon YI; Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea.
  • Park J; Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea.
  • Kim C; Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea.
  • Lee S; Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea.
  • Jhon YM; Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea.
Sci Rep ; 6: 21405, 2016 Feb 22.
Article in En | MEDLINE | ID: mdl-26898238
ABSTRACT
Monolayer MoS2 (1L-MoS2) has photoluminescence (PL) properties that can greatly vary via transition between neutral and charged exciton PLs depending on carrier density. Here, for the first time, we present a chemical doping method for reversible transition between neutral and charged excitons of 1L-MoS2 using chlorine-hydrogen-based plasma functionalization. The PL of 1L-MoS2 is drastically increased by p-type chlorine plasma doping in which its intensity is easily tuned by controlling the plasma treatment duration. We find that despite their strong adhesion, a post hydrogen plasma treatment can very effectively dedope chlorine adatoms in a controllable way while maintaining robust structural integrity, which enables well-defined reversible PL control of 1L-MoS2. After exhaustive chlorine dedoping, the hydrogen plasma process induces n-type doping of 1L-MoS2, degrading the PL further, which can also be recovered by subsequent chlorine plasma treatment, extending the range of tunable PL into a bidirectional regime. This cyclically-tunable carrier doping method can be usefully employed in fabricating highly-tunable n- and p-type domains in monolayer transition-metal dichalcogenides suitable for two-dimensional electro-optic modulators, on-chip lasers, and spin- and valley-polarized light-emitting diodes.

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Sci Rep Year: 2016 Document type: Article

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Sci Rep Year: 2016 Document type: Article
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