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Influence of Surface Passivation on AlN Barrier Stress and Scattering Mechanism in Ultra-thin AlN/GaN Heterostructure Field-Effect Transistors.
Lv, Y J; Song, X B; Wang, Y G; Fang, Y L; Feng, Z H.
Affiliation
  • Lv YJ; National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang, 050051, China. yuanjielv@163.com.
  • Song XB; National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang, 050051, China.
  • Wang YG; National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang, 050051, China.
  • Fang YL; National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang, 050051, China.
  • Feng ZH; National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang, 050051, China. ga917vv@163.com.
Nanoscale Res Lett ; 11(1): 373, 2016 Dec.
Article in En | MEDLINE | ID: mdl-27553382
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanoscale Res Lett Year: 2016 Document type: Article Affiliation country: China Country of publication: Estados Unidos
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanoscale Res Lett Year: 2016 Document type: Article Affiliation country: China Country of publication: Estados Unidos