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Highly Flexible Resistive Switching Memory Based on the Electronic Switching Mechanism in the Al/TiO2/Al/Polyimide Structure.
Zhao, Jinshi; Zhang, Ming; Wan, Shangfei; Yang, Zhengchun; Hwang, Cheol Seong.
Affiliation
  • Zhao J; School of Electrical & Electronic Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology , Tianjin 300384, China.
  • Zhang M; School of Electrical & Electronic Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology , Tianjin 300384, China.
  • Wan S; School of Electrical & Electronic Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology , Tianjin 300384, China.
  • Yang Z; School of Electrical & Electronic Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology , Tianjin 300384, China.
  • Hwang CS; Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University , 599 Gwanak-ro, Gwanak-gu, Seoul 151-744, Republic of Korea.
ACS Appl Mater Interfaces ; 10(2): 1828-1835, 2018 Jan 17.
Article in En | MEDLINE | ID: mdl-29256591
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Appl Mater Interfaces Journal subject: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Year: 2018 Document type: Article Affiliation country: China Country of publication: Estados Unidos
Fulltext
Add to My VHL
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Appl Mater Interfaces Journal subject: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Year: 2018 Document type: Article Affiliation country: China Country of publication: Estados Unidos