Formation of n- and p-type regions in individual Si/SiO2 core/shell nanowires by ion beam doping.
Nanotechnology
; 29(47): 474001, 2018 Nov 23.
Article
in En
| MEDLINE
| ID: mdl-30192233
ABSTRACT
A method for cross-sectional doping of individual Si/SiO2 core/shell nanowires (NWs) is presented. P and B atoms are laterally implanted at different depths in the Si core. The healing of the implantation-related damage together with the electrical activation of the dopants takes place via solid phase epitaxy driven by millisecond-range flash lamp annealing. Electrical measurements through a bevel formed along the NW enabled us to demonstrate the concurrent formation of n- and p-type regions in individual Si/SiO2 core/shell NWs. These results might pave the way for ion beam doping of nanostructured semiconductors produced by using either top-down or bottom-up approaches.
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Nanotechnology
Year:
2018
Document type:
Article
Affiliation country:
Alemania