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High-temperature operation of a silicon qubit.
Ono, Keiji; Mori, Takahiro; Moriyama, Satoshi.
Affiliation
  • Ono K; Advanced Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan. k-ono@riken.jp.
  • Mori T; Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan.
  • Moriyama S; International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan.
Sci Rep ; 9(1): 469, 2019 Jan 24.
Article in En | MEDLINE | ID: mdl-30679469
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Sci Rep Year: 2019 Document type: Article Affiliation country: Japón Country of publication: Reino Unido
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Sci Rep Year: 2019 Document type: Article Affiliation country: Japón Country of publication: Reino Unido