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Electronic structure variations of polar and nonpolar ZnO lattices with nitrogen-ion bombardment using synchrotron-based in situ photoemission and X-ray absorption spectroscopy.
Huang, Yuyang; Li, Yaping; Wu, Meng; Wang, Hui Qiong; Yuan, Xuebin; Gholam, Turghunjan; Zeng, Hui; Wang, Jia Ou; Wu, Rui; Qian, Hai Jie; Zhang, Yufeng; Kang, Junyong.
Affiliation
  • Huang Y; Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, People's Republic of China.
  • Li Y; Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, People's Republic of China.
  • Wu M; Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, People's Republic of China.
  • Wang HQ; Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, People's Republic of China.
  • Yuan X; Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, People's Republic of China.
  • Gholam T; Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, People's Republic of China.
  • Zeng H; Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, People's Republic of China.
  • Wang JO; Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of China.
  • Wu R; Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of China.
  • Qian HJ; Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of China.
  • Zhang Y; Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, People's Republic of China.
  • Kang J; Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, People's Republic of China.
J Synchrotron Radiat ; 27(Pt 1): 83-89, 2020 Jan 01.
Article in En | MEDLINE | ID: mdl-31868740
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: J Synchrotron Radiat Journal subject: RADIOLOGIA Year: 2020 Document type: Article Country of publication: Estados Unidos
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: J Synchrotron Radiat Journal subject: RADIOLOGIA Year: 2020 Document type: Article Country of publication: Estados Unidos