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Atomic Layer Deposition Process-Enabled Carrier Mobility Boosting in Field-Effect Transistors through a Nanoscale ZnO/IGO Heterojunction.
Seul, Hyeon Joo; Kim, Min Jae; Yang, Hyun Ji; Cho, Min Hoe; Cho, Min Hee; Song, Woo-Bin; Jeong, Jae Kyeong.
Affiliation
  • Seul HJ; Department of Electronic Engineering, Hanyang University, Seoul 04763, South Korea.
  • Kim MJ; Department of Electronic Engineering, Hanyang University, Seoul 04763, South Korea.
  • Yang HJ; Department of Electronic Engineering, Hanyang University, Seoul 04763, South Korea.
  • Cho MH; Department of Electronic Engineering, Hanyang University, Seoul 04763, South Korea.
  • Cho MH; Semiconductor R&D Center, Samsung Electronics Company, 1, Samsungjeonja-ro, Hwaseong-si 18448, Gyeonggi-do, Korea.
  • Song WB; Semiconductor R&D Center, Samsung Electronics Company, 1, Samsungjeonja-ro, Hwaseong-si 18448, Gyeonggi-do, Korea.
  • Jeong JK; Department of Electronic Engineering, Hanyang University, Seoul 04763, South Korea.
ACS Appl Mater Interfaces ; 12(30): 33887-33898, 2020 Jul 29.
Article in En | MEDLINE | ID: mdl-32571011
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Appl Mater Interfaces Journal subject: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Year: 2020 Document type: Article Affiliation country: Corea del Sur
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Appl Mater Interfaces Journal subject: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Year: 2020 Document type: Article Affiliation country: Corea del Sur