High-responsivity broad-band sensing and photoconduction mechanism in direct-Gap α-In<sub>2</sub>Se<sub>3</sub> nanosheet photodetectors. | Nanotechnology;31(46): 465201, 2020 Nov 13. | MEDLINE

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High-responsivity broad-band sensing and photoconduction mechanism in direct-Gap α-In₂Se₃ nanosheet photodetectors.

Anandan, Manickam; Hsieh, Ho-Feng; Liu, Fang-Chen; Chen, Chi-Yang; Lee, Kuei-Yi; Chao, Liang-Chiun; Ho, Ching-Hwa; Chen, Ruei-San.

Affiliation

Anandan M; Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 10607, Taiwan.

Nanotechnology ; 31(46): 465201, 2020 Nov 13.

Article in En | MEDLINE | ID: mdl-32845871

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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanotechnology Year: 2020 Document type: Article Affiliation country: Taiwán Country of publication: Reino Unido

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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanotechnology Year: 2020 Document type: Article Affiliation country: Taiwán Country of publication: Reino Unido