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Modulation of 1 MeV electron irradiation on ultraviolet response in MoS2FET.
Li, Heyi; Liu, Chaoming; Zhang, Yanqing; Qi, Chunhua; Ma, Guoliang; Wang, Tianqi; Dong, Shangli; Huo, Mingxue.
Affiliation
  • Li H; Harbin Institute of Technology, Harbin, People's Republic of China.
  • Liu C; Harbin Institute of Technology, Harbin, People's Republic of China.
  • Zhang Y; Harbin Institute of Technology, Harbin, People's Republic of China.
  • Qi C; Harbin Institute of Technology, Harbin, People's Republic of China.
  • Ma G; Harbin Institute of Technology, Harbin, People's Republic of China.
  • Wang T; Harbin Institute of Technology, Harbin, People's Republic of China.
  • Dong S; Harbin Institute of Technology, Harbin, People's Republic of China.
  • Huo M; Harbin Institute of Technology, Harbin, People's Republic of China.
Nanotechnology ; 32(47)2021 Sep 02.
Article in En | MEDLINE | ID: mdl-34388741
ABSTRACT
The material, electrical and ultraviolet optoelectronic properties of few layers bottom molybdenum disulfide (MoS2) field effect transistors (FETs) device was investigated before and after 1 MeV electron irradiation. Due to the participation of SiO2in conduction, we discovered novel photoelectric properties and a relatively long photogenerated carrier lifetime (several tens of seconds). Electron irradiation causes lattice distortion, the decrease of carrier mobility, and the increase of interface state. It leads to the degradation of output characteristics, transfer characteristics and photocurrent of the MoS2FET.
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanotechnology Year: 2021 Document type: Article
Fulltext
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanotechnology Year: 2021 Document type: Article