Efficient passivation of n-type and p-type silicon surface defects by hydrogen sulfide gas reaction.
J Phys Condens Matter
; 33(46)2021 Sep 03.
Article
in En
| MEDLINE
| ID: mdl-34407514
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
J Phys Condens Matter
Journal subject:
BIOFISICA
Year:
2021
Document type:
Article
Affiliation country:
Estados Unidos
Country of publication:
Reino Unido