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Photothermal Effects and Heat Conduction in Nanogranular Silicon Films.
Kurbanova, Bayan A; Mussabek, Gauhar K; Timoshenko, Viktor Y; Lysenko, Vladimir; Utegulov, Zhandos N.
Affiliation
  • Kurbanova BA; Department of Physics, School of Sciences and Humanities, Nazarbayev University, Nur-Sultan 010000, Kazakhstan.
  • Mussabek GK; Faculty of Physics and Technology, Al-Farabi Kazakh National University, Almaty 050040, Kazakhstan.
  • Timoshenko VY; Laboratory "Nanotheranostics", Institute of Engineering Physics for Biomedicine, National Research Nuclear University "MEPhI", 115409 Moscow, Russia.
  • Lysenko V; Laboratory "Nanotheranostics", Institute of Engineering Physics for Biomedicine, National Research Nuclear University "MEPhI", 115409 Moscow, Russia.
  • Utegulov ZN; Faculty of Physics, Lomonosov Moscow State University, 119911 Moscow, Russia.
Nanomaterials (Basel) ; 11(9)2021 Sep 13.
Article in En | MEDLINE | ID: mdl-34578696
ABSTRACT
We present results on the photothermal (PT) and heat conductive properties of nanogranular silicon (Si) films synthesized by evaporation of colloidal droplets (drop-casting) of 100 ± 50 nm-sized crystalline Si nanoparticles (NP) deposited on glass substrates. Simulations of the absorbed light intensity and photo-induced temperature distribution across the Si NP films were carried out by using the Finite difference time domain (FDTD) and finite element mesh (FEM) modeling and the obtained data were compared with the local temperatures measured by micro-Raman spectroscopy and then was used for determining the heat conductivities k in the films of various thicknesses. The cubic-to-hexagonal phase transition in Si NP films caused by laser-induced heating was found to be heavily influenced by the film thickness and heat-conductive properties of glass substrate, on which the films were deposited. The k values in drop-casted Si nanogranular films were found to be in the range of lowest k of other types of nanostructurely voided Si films due to enhanced phonon scattering across inherently voided topology, weak NP-NP and NP-substrate interface bonding within nanogranular Si films.
Key words

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanomaterials (Basel) Year: 2021 Document type: Article Affiliation country: Kazajstán

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanomaterials (Basel) Year: 2021 Document type: Article Affiliation country: Kazajstán
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