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Near-Infrared Self-Powered Linearly Polarized Photodetection and Digital Incoherent Holography Using WSe2/ReSe2 van der Waals Heterostructure.
Ahn, Jongtae; Ko, Kyul; Kyhm, Ji-Hoon; Ra, Hyun-Soo; Bae, Heesun; Hong, Sungjae; Kim, Dae-Yeon; Jang, Jisu; Kim, Tae Wook; Choi, Sungwon; Kang, Ji-Hoon; Kwon, Namhee; Park, Soohyung; Ju, Byeong-Kwon; Poon, Ting-Chung; Park, Min-Chul; Im, Seongil; Hwang, Do Kyung.
Affiliation
  • Ahn J; Center of Optoelectronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.
  • Ko K; Van der Waals Materials Research Center, Institute of Physics and Applied Physics, Yonsei University, Seoul 03722, Republic of Korea.
  • Kyhm JH; Center of Optoelectronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.
  • Ra HS; Display and Nanosystem Laboratory, College of Engineering, Korea University, Seoul 02841, Republic of Korea.
  • Bae H; Quantum-functional Semiconductor Research Center, Dongguk University, Seoul 04620, Republic of Korea.
  • Hong S; Center of Optoelectronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.
  • Kim DY; Van der Waals Materials Research Center, Institute of Physics and Applied Physics, Yonsei University, Seoul 03722, Republic of Korea.
  • Jang J; Van der Waals Materials Research Center, Institute of Physics and Applied Physics, Yonsei University, Seoul 03722, Republic of Korea.
  • Kim TW; Center of Optoelectronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.
  • Choi S; Center of Optoelectronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.
  • Kang JH; Division of Nano & Information Technology, KIST School, University of Science and Technology (UST), Seoul 02792, Republic of Korea.
  • Kwon N; Center of Optoelectronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.
  • Park S; Center of Optoelectronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.
  • Ju BK; Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States.
  • Poon TC; Advanced Analysis Center, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.
  • Park MC; Advanced Analysis Center, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.
  • Im S; Display and Nanosystem Laboratory, College of Engineering, Korea University, Seoul 02841, Republic of Korea.
  • Hwang DK; Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061, United States.
ACS Nano ; 15(11): 17917-17925, 2021 Nov 23.
Article in En | MEDLINE | ID: mdl-34677045
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Nano Year: 2021 Document type: Article Country of publication: Estados Unidos
Fulltext
Add to My VHL
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XML
PubMed Links
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Nano Year: 2021 Document type: Article Country of publication: Estados Unidos