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Standards for the Characterization of Endurance in Resistive Switching Devices.
Lanza, Mario; Waser, Rainer; Ielmini, Daniele; Yang, J Joshua; Goux, Ludovic; Suñe, Jordi; Kenyon, Anthony Joseph; Mehonic, Adnan; Spiga, Sabina; Rana, Vikas; Wiefels, Stefan; Menzel, Stephan; Valov, Ilia; Villena, Marco A; Miranda, Enrique; Jing, Xu; Campabadal, Francesca; Gonzalez, Mireia B; Aguirre, Fernando; Palumbo, Felix; Zhu, Kaichen; Roldan, Juan Bautista; Puglisi, Francesco Maria; Larcher, Luca; Hou, Tuo-Hung; Prodromakis, Themis; Yang, Yuchao; Huang, Peng; Wan, Tianqing; Chai, Yang; Pey, Kin Leong; Raghavan, Nagarajan; Dueñas, Salvador; Wang, Tao; Xia, Qiangfei; Pazos, Sebastian.
Affiliation
  • Lanza M; Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
  • Waser R; Peter-Grünberg-Institut (PGI-7), Forschungszentrum Jülich GmbH, 52425 Jülich, Germany.
  • Ielmini D; Peter-Grünberg-Institut (PGI-10), Forschungszentrum Jülich GmbH, 52425 Jülich, Germany.
  • Yang JJ; Institut für Werkstoffe der Elektrotechnik 2 (IWE2), RWTH Aachen University, Aachen 52074, Germany.
  • Goux L; Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano and IU.NET, Piazza L. da Vinci 32, Milano, 20133, Italy.
  • Suñe J; Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States.
  • Kenyon AJ; Imec, Kapeldreef 75, 3001 Leuven, Belgium.
  • Mehonic A; Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona, Barcelona 08193, Spain.
  • Spiga S; Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom.
  • Rana V; Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom.
  • Wiefels S; CNR-IMM, Unit of Agrate Brianza, Via C. Olivetti 2, Agrate Brianza (MB) 20864, Italy.
  • Menzel S; Peter-Grünberg-Institut (PGI-10), Forschungszentrum Jülich GmbH, 52425 Jülich, Germany.
  • Valov I; Peter-Grünberg-Institut (PGI-7), Forschungszentrum Jülich GmbH, 52425 Jülich, Germany.
  • Villena MA; Peter-Grünberg-Institut (PGI-7), Forschungszentrum Jülich GmbH, 52425 Jülich, Germany.
  • Miranda E; Peter-Grünberg-Institut (PGI-7), Forschungszentrum Jülich GmbH, 52425 Jülich, Germany.
  • Jing X; Applied Materials Inc., Via Ruini, Reggio Emilia 74L 42122, Italy.
  • Campabadal F; Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona, Barcelona 08193, Spain.
  • Gonzalez MB; School of Materials Science and Engineering, Jiangsu Key Laboratory of Advanced Metallic Materials, Southeast University, Nanjing 211189, China.
  • Aguirre F; Institut de Microelectrònica de Barcelona-Centre Nacional de Microelectrònica, Consejo Superior de Investigaciones Científicas, Bellaterra 08193, Spain.
  • Palumbo F; Institut de Microelectrònica de Barcelona-Centre Nacional de Microelectrònica, Consejo Superior de Investigaciones Científicas, Bellaterra 08193, Spain.
  • Zhu K; Unidad de Investigación y Desarrollo de las Ingenierías-CONICET, Facultad Regional Buenos Aires, Universidad Tecnológica Nacional (UIDI-CONICET/FRBA-UTN), Buenos Aires, Medrano 951(C1179AAQ), Argentina.
  • Roldan JB; Unidad de Investigación y Desarrollo de las Ingenierías-CONICET, Facultad Regional Buenos Aires, Universidad Tecnológica Nacional (UIDI-CONICET/FRBA-UTN), Buenos Aires, Medrano 951(C1179AAQ), Argentina.
  • Puglisi FM; Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
  • Larcher L; Departamento de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, Avd. Fuentenueva s/n, Granada 18071, Spain.
  • Hou TH; Dipartimento di Ingegneria "Enzo Ferrari", Università di Modena e Reggio Emilia, Via P. Vivarelli 10/1, Modena 41125, Italy.
  • Prodromakis T; Applied Materials Inc., Via Ruini, Reggio Emilia 74L 42122, Italy.
  • Yang Y; Department of Electronics Engineering and Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan.
  • Huang P; Centre for Electronics Frontiers, University of Southampton, Southampton SO171BJ, United Kingdom.
  • Wan T; Key Laboratory of Microelectronic Devices and Circuits (MOE), Department of Micro/nanoelectronics, Peking University, Beijing 100871, China.
  • Chai Y; Key Laboratory of Microelectronic Devices and Circuits (MOE), Department of Micro/nanoelectronics, Peking University, Beijing 100871, China.
  • Pey KL; Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong.
  • Raghavan N; Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong.
  • Dueñas S; Engineering Product Development, Singapore University of Technology and Design (SUTD), 8 Somapah Road, 487372 Singapore.
  • Wang T; Engineering Product Development, Singapore University of Technology and Design (SUTD), 8 Somapah Road, 487372 Singapore.
  • Xia Q; Department of Electronics, University of Valladolid, Paseo de Belén 15, Valladolid E-47011, Spain.
  • Pazos S; Institute of Functional Nano and Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University 199 Ren-Ai Road, Suzhou 215123, China.
ACS Nano ; 15(11): 17214-17231, 2021 Nov 23.
Article in En | MEDLINE | ID: mdl-34730935
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Nano Year: 2021 Document type: Article Affiliation country: Arabia Saudita Country of publication: Estados Unidos
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Nano Year: 2021 Document type: Article Affiliation country: Arabia Saudita Country of publication: Estados Unidos