Circuit-Level Memory Technologies and Applications based on 2D Materials.

Ma, Jiahui; Liu, Hefei; Yang, Ning; Zou, Jingyi; Lin, Sen; Zhang, Yuhao; Zhang, Xu; Guo, Jing; Wang, Han

Ma, Jiahui; Liu, Hefei; Yang, Ning; Zou, Jingyi; Lin, Sen; Zhang, Yuhao; Zhang, Xu; Guo, Jing; Wang, Han.

Affiliation

Ma J; Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, 90089, USA.
Liu H; Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, 90089, USA.
Yang N; Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL, 32611, USA.
Zou J; Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA, 15213, USA.
Lin S; Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA, 15213, USA.
Zhang Y; Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, 24060, USA.
Zhang X; Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA, 15213, USA.
Guo J; Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL, 32611, USA.
Wang H; Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, 90089, USA.

Adv Mater ; 34(48): e2202371, 2022 Dec.

Article in En | MEDLINE | ID: mdl-35607274

Key words

2D materials; in-memory computing; integrated circuits; memory technology

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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Adv Mater Journal subject: BIOFISICA / QUIMICA Year: 2022 Document type: Article Affiliation country: Estados Unidos Country of publication: Alemania

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