Dual-Step Selective Homoepitaxy of Ge with Low Defect Density and Modulated Strain Based on Optimized Ge/Si Virtual Substrate.
Materials (Basel)
; 15(10)2022 May 18.
Article
in En
| MEDLINE
| ID: mdl-35629618
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Materials (Basel)
Year:
2022
Document type:
Article
Affiliation country:
China
Country of publication:
Suiza