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High Luminous Efficacy Phosphor-Converted Mass-Produced White LEDs Achieved by AlN Prebuffer and Transitional-Refraction-Index Patterned Sapphire Substrate.
Zhang, Shuo; Liang, Meng; Yan, Yan; Huang, Jinpeng; Li, Yan; Feng, Tao; Zhu, Xueliang; Li, Zhicong; Xu, Chenke; Wang, Junxi; Li, Jinmin; Liu, Zhiqiang; Yi, Xiaoyan.
Affiliation
  • Zhang S; Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
  • Liang M; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
  • Yan Y; Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China.
  • Huang J; Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
  • Li Y; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
  • Feng T; Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China.
  • Zhu X; Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
  • Li Z; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
  • Xu C; Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China.
  • Wang J; Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
  • Li J; Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
  • Liu Z; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
  • Yi X; Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China.
Nanomaterials (Basel) ; 12(10)2022 May 11.
Article in En | MEDLINE | ID: mdl-35630859
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanomaterials (Basel) Year: 2022 Document type: Article Affiliation country: China Country of publication: Suiza
Fulltext
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanomaterials (Basel) Year: 2022 Document type: Article Affiliation country: China Country of publication: Suiza