Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates.
Nanoscale Adv
; 3(13): 3835-3845, 2021 Jun 30.
Article
in En
| MEDLINE
| ID: mdl-36133019
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Nanoscale Adv
Year:
2021
Document type:
Article
Country of publication:
Reino Unido