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C3N2: the missing part of highly stable porous graphitic carbon nitride semiconductors.
Cai, Xinyong; Chen, Jiao; Wang, Hongyan; Ni, Yuxiang; Chen, Yuanzheng; King, R Bruce.
Affiliation
  • Cai X; School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Ministry of Education of China, Southwest Jiaotong University, Chengdu 610031, China. hongyanw@swjtu.edu.cn.
  • Chen J; School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Ministry of Education of China, Southwest Jiaotong University, Chengdu 610031, China. hongyanw@swjtu.edu.cn.
  • Wang H; School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Ministry of Education of China, Southwest Jiaotong University, Chengdu 610031, China. hongyanw@swjtu.edu.cn.
  • Ni Y; School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Ministry of Education of China, Southwest Jiaotong University, Chengdu 610031, China. hongyanw@swjtu.edu.cn.
  • Chen Y; School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Ministry of Education of China, Southwest Jiaotong University, Chengdu 610031, China. hongyanw@swjtu.edu.cn.
  • King RB; Beijing Computational Science Research Center, Haidian District, Beijing 100193, China.
Nanoscale Horiz ; 8(5): 662-673, 2023 May 02.
Article in En | MEDLINE | ID: mdl-36912249
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Full text: 1 Collection: 01-internacional Database: MEDLINE Type of study: Prognostic_studies Language: En Journal: Nanoscale Horiz Year: 2023 Document type: Article Affiliation country: China
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Full text: 1 Collection: 01-internacional Database: MEDLINE Type of study: Prognostic_studies Language: En Journal: Nanoscale Horiz Year: 2023 Document type: Article Affiliation country: China