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Interfacial engineering of ferromagnetism in wafer-scale van der Waals Fe4GeTe2 far above room temperature.
Wang, Hangtian; Lu, Haichang; Guo, Zongxia; Li, Ang; Wu, Peichen; Li, Jing; Xie, Weiran; Sun, Zhimei; Li, Peng; Damas, Héloïse; Friedel, Anna Maria; Migot, Sylvie; Ghanbaja, Jaafar; Moreau, Luc; Fagot-Revurat, Yannick; Petit-Watelot, Sébastien; Hauet, Thomas; Robertson, John; Mangin, Stéphane; Zhao, Weisheng; Nie, Tianxiao.
Affiliation
  • Wang H; Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China.
  • Lu H; Universite de Lorraine, Institut Jean Lamour, UMR CNRS 7198, Nancy, France.
  • Guo Z; Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China. HaichangLu@buaa.edu.cn.
  • Li A; Engineering Department, Cambridge University, Cambridge, CB2 1PZ, UK. HaichangLu@buaa.edu.cn.
  • Wu P; Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China.
  • Li J; Universite de Lorraine, Institut Jean Lamour, UMR CNRS 7198, Nancy, France.
  • Xie W; Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China.
  • Sun Z; Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China.
  • Li P; Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China.
  • Damas H; Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China.
  • Friedel AM; School of Materials Science and Engineering, Beihang University, Beijing, 100191, China.
  • Migot S; Department of Electrical and Computer Engineering, Auburn University, Auburn, AL, USA.
  • Ghanbaja J; Universite de Lorraine, Institut Jean Lamour, UMR CNRS 7198, Nancy, France.
  • Moreau L; Universite de Lorraine, Institut Jean Lamour, UMR CNRS 7198, Nancy, France.
  • Fagot-Revurat Y; Fachbereich Physik and Landesforschungszentrum OPTIMAS, Technische Universität Kaiserslautern, 67663, Kaiserslautern, Germany.
  • Petit-Watelot S; Universite de Lorraine, Institut Jean Lamour, UMR CNRS 7198, Nancy, France.
  • Hauet T; Universite de Lorraine, Institut Jean Lamour, UMR CNRS 7198, Nancy, France.
  • Robertson J; Universite de Lorraine, Institut Jean Lamour, UMR CNRS 7198, Nancy, France.
  • Mangin S; Universite de Lorraine, Institut Jean Lamour, UMR CNRS 7198, Nancy, France.
  • Zhao W; Universite de Lorraine, Institut Jean Lamour, UMR CNRS 7198, Nancy, France.
  • Nie T; Universite de Lorraine, Institut Jean Lamour, UMR CNRS 7198, Nancy, France.
Nat Commun ; 14(1): 2483, 2023 Apr 29.
Article in En | MEDLINE | ID: mdl-37120587
ABSTRACT
Despite recent advances in exfoliated vdW ferromagnets, the widespread application of 2D magnetism requires a Curie temperature (Tc) above room temperature as well as a stable and controllable magnetic anisotropy. Here we demonstrate a large-scale iron-based vdW material Fe4GeTe2 with the Tc reaching ~530 K. We confirmed the high-temperature ferromagnetism by multiple characterizations. Theoretical calculations suggested that the interface-induced right shift of the localized states for unpaired Fe d electrons is the reason for the enhanced Tc, which was confirmed by ultraviolet photoelectron spectroscopy. Moreover, by precisely tailoring Fe concentration we achieved arbitrary control of magnetic anisotropy between out-of-plane and in-plane without inducing any phase disorders. Our finding sheds light on the high potential of Fe4GeTe2 in spintronics, which may open opportunities for room-temperature application of all-vdW spintronic devices.
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nat Commun Journal subject: BIOLOGIA / CIENCIA Year: 2023 Document type: Article Affiliation country: China
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nat Commun Journal subject: BIOLOGIA / CIENCIA Year: 2023 Document type: Article Affiliation country: China