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Substrate temperature dependence of structure and optical properties of ZnTiO3:Er3+/Yb3+ thin films synthesized by pulsed laser deposition.
Mofokeng, S J; Molefe, F V; Kroon, R E; Swart, H C; Mokoena, T P; Dhlamini, M S; Sithole, M J; Noto, L L.
Affiliation
  • Mofokeng SJ; Department of Physics, College of Science Engineering and Technology, University of South Africa, Johannesburg, 1710, South Africa.
  • Molefe FV; Department of Physics, Tshwane University of Technology, Private Bag X680, Pretoria, 0001, South Africa.
  • Kroon RE; Department of Physics, University of the Free State, Bloemfontein, ZA9300, South Africa.
  • Swart HC; Department of Physics, University of the Free State, Bloemfontein, ZA9300, South Africa.
  • Mokoena TP; Department of Physics, University of the Free State, Bloemfontein, ZA9300, South Africa.
  • Dhlamini MS; Department of Physics, College of Science Engineering and Technology, University of South Africa, Johannesburg, 1710, South Africa.
  • Sithole MJ; Department of Physics, College of Science Engineering and Technology, University of South Africa, Johannesburg, 1710, South Africa.
  • Noto LL; Department of Physics, College of Science Engineering and Technology, University of South Africa, Johannesburg, 1710, South Africa.
Heliyon ; 9(5): e16259, 2023 May.
Article in En | MEDLINE | ID: mdl-37234608
ABSTRACT
ZnTiO3Er3+,Yb3+ thin film phosphors were successfully deposited by pulsed laser deposition (PLD) at different substrate temperatures. The distribution of the ions in the films was investigated and the chemical analysis showed that the doping ions were homogeneously distributed in the thin films. The optical response of the phosphors revealed that the reflectance percentages of the ZnTiO3Er3+,Yb3+ vary with the silicon substrate temperature due to the differences in the thickness and morphological roughness of the thin films. Under 980 nm diode laser excitation, the ZnTiO3Er3+,Yb3+ film phosphors displayed up-conversion emission from the Er3+ electronic transitions, with violet, blue, green, and red emission lines at 410, 480, 525, 545 and 660 nm from 2H9/2 â†’ 4I15/2, 4F7/2 â†’ 4I15/2, 2H11/2 â†’ 4I15/2, 4S3/2 â†’ 4I15/2 and 4F9/2 â†’ 4I15/2 transitions, respectively. The up-conversion emission was enhanced by increasing the silico (Si) substrate temperature during the deposition. Based on the photoluminescence properties and decay lifetime analysis, the energy level diagram was established and the up-conversion energy-transfer mechanism was discussed in detail.
Key words

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Heliyon Year: 2023 Document type: Article Affiliation country: Sudáfrica

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Heliyon Year: 2023 Document type: Article Affiliation country: Sudáfrica