Sn component gradient GeSn photodetector with 3â
dB bandwidth over 50â
GHz for extending L band telecommunication.
Opt Lett
; 48(23): 6148-6151, 2023 Dec 01.
Article
in En
| MEDLINE
| ID: mdl-38039213
ABSTRACT
In this work, high-performance GeSn photodetectors with a Sn content gradient GeSn layer were fabricated on SOI substrate by CMOS-compatible process for C and L band telecommunication. The active GeSn layer has a Sn component increased from 9 to 10.7% with the controlled relaxation degree up to 84%. The responsivities of GeSn detectors at 1550â
nm and 1630â
nm are 0.47â
A/W and 0.32â
A/W under -4â
V bias, respectively. Over 50â
GHz 3â
dB bandwidth with the eye pattern about 70â
Gb/s was also evidenced at 1630â
nm. These results indicate that the GeSn photodetectors have a promising application for extending the silicon photonics from C band to L band.
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Opt Lett
Year:
2023
Document type:
Article