Gap State-Modulated Van Der Waals Short-Term Memory with Broad Band Negative Photoconductance.
Small
; 20(21): e2309626, 2024 May.
Article
in En
| MEDLINE
| ID: mdl-38098431
ABSTRACT
Floating gate memory (FGM), composed of van der Waals (vdW) junctions with an atomically thin floating layer for charge storage, is widely employed to develop logic-in memories and in-sensor computing devices. Most research efforts of FGM are spent on achieving long-term charge storage and fast reading/writing for flash and random-access memory. However, dynamic modulation of memory time via a tunneling barrier and vdW interfaces, which is critical for synaptic computing and machine vision, is still lacking. Here, a van der Waals short-term memory with tunable memory windows and retention times from milliseconds to thousands of seconds is reported, which is approximately exponentially proportional to the thickness h-BN (hexagonal boron nitride) barrier. The specific h-BN barrier with fruitful gap states provides charge release channels for trapped charges, making the vdW device switchable between positive photoconductance and negative photoconductance with a broadband light from IR to UV range. The dynamic short-term memory with tunable photo response highlights the design strategy of novel vdW memory vis interface engineering for further intelligent information storage and optoelectronic detection.
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Small
Journal subject:
ENGENHARIA BIOMEDICA
Year:
2024
Document type:
Article
Affiliation country:
China
Country of publication:
Alemania