Direct bandgap emission from strain-doped germanium.
Nat Commun
; 15(1): 618, 2024 Jan 19.
Article
in En
| MEDLINE
| ID: mdl-38242877
ABSTRACT
Germanium (Ge) is an attractive material for Silicon (Si) compatible optoelectronics, but the nature of its indirect bandgap renders it an inefficient light emitter. Drawing inspiration from the significant expansion of Ge volume upon lithiation as a Lithium (Li) ion battery anode, here, we propose incorporating Li atoms into the Ge to cause lattice expansion to achieve the desired tensile strain for a transition from an indirect to a direct bandgap. Our first-principles calculations show that a minimal amount of 3 at.% Li can convert Ge from an indirect to a direct bandgap to possess a dipole transition matrix element comparable to that of typical direct bandgap semiconductors. To enhance compatibility with Si Complementary-Metal-Oxide-Semiconductors (CMOS) technology, we additionally suggest implanting noble gas atoms instead of Li atoms. We also demonstrate the tunability of the direct-bandgap emission wavelength through the manipulation of dopant concentration, enabling coverage of the mid-infrared to far-infrared spectrum. This Ge-based light-emitting approach presents exciting prospects for surpassing the physical limitations of Si technology in the field of photonics and calls for experimental proof-of-concept studies.
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Nat Commun
Journal subject:
BIOLOGIA
/
CIENCIA
Year:
2024
Document type:
Article
Affiliation country:
China