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Theoretical prediction of electronic properties and contact barriers in a metal/semiconductor NbS2/Janus MoSSe van der Waals heterostructure.
Nha, P H; Nguyen, Chuong V; Hieu, Nguyen N; Phuc, Huynh V; Nguyen, Cuong Q.
Affiliation
  • Nha PH; Faculty of Electrical Engineering, Hanoi University of Industry Hanoi 100000 Vietnam nhaph@haui.edu.vn.
  • Nguyen CV; Department of Materials Science and Engineering, Le Quy Don Technical University Hanoi Vietnam chuong.vnguyen@lqdtu.edu.vn.
  • Hieu NN; Institute of Research and Development, Duy Tan University Da Nang 550000 Vietnam nguyenquangcuong3@duytan.edu.vn.
  • Phuc HV; Faculty of Natural Sciences, Duy Tan University Da Nang 550000 Vietnam.
  • Nguyen CQ; Division of Theoretical Physics, Dong Thap University Cao Lanh 870000 Vietnam hvphuc@dthu.edu.vn.
Nanoscale Adv ; 6(4): 1193-1201, 2024 Feb 13.
Article in En | MEDLINE | ID: mdl-38356616
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Full text: 1 Collection: 01-internacional Database: MEDLINE Type of study: Guideline / Prognostic_studies / Risk_factors_studies Language: En Journal: Nanoscale Adv Year: 2024 Document type: Article Country of publication: Reino Unido
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Full text: 1 Collection: 01-internacional Database: MEDLINE Type of study: Guideline / Prognostic_studies / Risk_factors_studies Language: En Journal: Nanoscale Adv Year: 2024 Document type: Article Country of publication: Reino Unido