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Assembly and Alignment of High Packing Density Carbon Nanotube Arrays Using Lithographically Defined Microscopic Water Features.
Foradori, Sean M; Prussack, Brett; Berson, Arganthaël; Arnold, Michael S.
Affiliation
  • Foradori SM; Department of Materials Science and Engineering, University of Wisconsin-Madison, 1509 University Avenue, Madison, Wisconsin 53706, United States.
  • Prussack B; Department of Mechanical Engineering, University of Wisconsin-Madison, 1513 University Avenue, Madison, Wisconsin 53706, United States.
  • Berson A; Department of Mechanical Engineering, University of Wisconsin-Madison, 1513 University Avenue, Madison, Wisconsin 53706, United States.
  • Arnold MS; Department of Materials Science and Engineering, University of Wisconsin-Madison, 1509 University Avenue, Madison, Wisconsin 53706, United States.
ACS Nano ; 18(11): 8259-8269, 2024 Mar 19.
Article in En | MEDLINE | ID: mdl-38437517
ABSTRACT
High packing density aligned arrays of semiconducting carbon nanotubes (CNTs) are required for many electronics applications. Past work has shown that the accumulation of CNTs at a water-solvent interface can drive array self-assembly. Previously, the confining interface was a large-area, macroscopic feature. Here, we report on the CNT assembly on microscopic water features. Water microdroplets are formed on 10-100 µm wide hydrophilic stripes patterned on a substrate. Exposure to CNTs dispersed in solvent accumulates CNTs at the microdroplet-solvent interface, driving their alignment and deposition at the microdroplet-solvent-substrate contact line. Compared with macroscopic methods in which the contact line uncontrollably moves across the substrate as it is pulled out of the liquids, the hydrophilic patterns and microdroplets allow pinning of the contact line. As CNTs deposit, the contact line self-translates, allowing for dense CNT packing. We realize monolayer CNT arrays aligned within ±3.9° at density of 250 µm-1 and field effect transistors with a high current density of 1.9 mA µm-1 and transconductance of 1.2 mS µm-1 at -0.6 V drain bias and 60 nm channel length.
Key words

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Nano Year: 2024 Document type: Article Affiliation country: Estados Unidos

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Nano Year: 2024 Document type: Article Affiliation country: Estados Unidos