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High-speed and large-scale intrinsically stretchable integrated circuits.
Zhong, Donglai; Wu, Can; Jiang, Yuanwen; Yuan, Yujia; Kim, Min-Gu; Nishio, Yuya; Shih, Chien-Chung; Wang, Weichen; Lai, Jian-Cheng; Ji, Xiaozhou; Gao, Theodore Z; Wang, Yi-Xuan; Xu, Chengyi; Zheng, Yu; Yu, Zhiao; Gong, Huaxin; Matsuhisa, Naoji; Zhao, Chuanzhen; Lei, Yusheng; Liu, Deyu; Zhang, Song; Ochiai, Yuto; Liu, Shuhan; Wei, Shiyuan; Tok, Jeffrey B-H; Bao, Zhenan.
Affiliation
  • Zhong D; Department of Chemical Engineering, Stanford University, Stanford, CA, USA.
  • Wu C; Department of Chemical Engineering, Stanford University, Stanford, CA, USA.
  • Jiang Y; Department of Chemical Engineering, Stanford University, Stanford, CA, USA.
  • Yuan Y; Department of Electrical Engineering, Stanford University, Stanford, CA, USA.
  • Kim MG; Department of Chemical Engineering, Stanford University, Stanford, CA, USA.
  • Nishio Y; Department of Medical Engineering, Yonsei University College of Medicine, Seoul, Republic of Korea.
  • Shih CC; Department of Electrical Engineering, Stanford University, Stanford, CA, USA.
  • Wang W; Department of Chemical Engineering, Stanford University, Stanford, CA, USA.
  • Lai JC; Department of Chemical Engineering and Materials Engineering, National Yunlin University of Science and Technology, Yunlin, Taiwan.
  • Ji X; Department of Materials Science and Engineering, Stanford University, Stanford, CA, USA.
  • Gao TZ; Department of Chemical Engineering, Stanford University, Stanford, CA, USA.
  • Wang YX; Department of Chemical Engineering, Stanford University, Stanford, CA, USA.
  • Xu C; Department of Materials Science and Engineering, Stanford University, Stanford, CA, USA.
  • Zheng Y; Department of Chemical Engineering, Stanford University, Stanford, CA, USA.
  • Yu Z; Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin, China.
  • Gong H; Department of Chemical Engineering, Stanford University, Stanford, CA, USA.
  • Matsuhisa N; Department of Chemistry, Stanford University, Stanford, CA, USA.
  • Zhao C; Department of Chemistry, Stanford University, Stanford, CA, USA.
  • Lei Y; Department of Chemical Engineering, Stanford University, Stanford, CA, USA.
  • Liu D; Department of Chemical Engineering, Stanford University, Stanford, CA, USA.
  • Zhang S; Institute of Industrial Science, The University of Tokyo, Tokyo, Japan.
  • Ochiai Y; Department of Chemical Engineering, Stanford University, Stanford, CA, USA.
  • Liu S; Department of Chemical Engineering, Stanford University, Stanford, CA, USA.
  • Wei S; Department of Chemical Engineering, Stanford University, Stanford, CA, USA.
  • Tok JB; Department of Chemical Engineering, Stanford University, Stanford, CA, USA.
  • Bao Z; Department of Chemical Engineering, Stanford University, Stanford, CA, USA.
Nature ; 627(8003): 313-320, 2024 Mar.
Article in En | MEDLINE | ID: mdl-38480964
ABSTRACT
Intrinsically stretchable electronics with skin-like mechanical properties have been identified as a promising platform for emerging applications ranging from continuous physiological monitoring to real-time analysis of health conditions, to closed-loop delivery of autonomous medical treatment1-7. However, current technologies could only reach electrical performance at amorphous-silicon level (that is, charge-carrier mobility of about 1 cm2 V-1 s-1), low integration scale (for example, 54 transistors per circuit) and limited functionalities8-11. Here we report high-density, intrinsically stretchable transistors and integrated circuits with high driving ability, high operation speed and large-scale integration. They were enabled by a combination of innovations in materials, fabrication process design, device engineering and circuit design. Our intrinsically stretchable transistors exhibit an average field-effect mobility of more than 20 cm2 V-1 s-1 under 100% strain, a device density of 100,000 transistors per cm2, including interconnects and a high drive current of around 2 µA µm-1 at a supply voltage of 5 V. Notably, these achieved parameters are on par with state-of-the-art flexible transistors based on metal-oxide, carbon nanotube and polycrystalline silicon materials on plastic substrates12-14. Furthermore, we realize a large-scale integrated circuit with more than 1,000 transistors and a stage-switching frequency greater than 1 MHz, for the first time, to our knowledge, in intrinsically stretchable electronics. Moreover, we demonstrate a high-throughput braille recognition system that surpasses human skin sensing ability, enabled by an active-matrix tactile sensor array with a record-high density of 2,500 units per cm2, and a light-emitting diode display with a high refreshing speed of 60 Hz and excellent mechanical robustness. The above advancements in device performance have substantially enhanced the abilities of skin-like electronics.
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Full text: 1 Collection: 01-internacional Database: MEDLINE Main subject: Skin / Transistors, Electronic / Equipment Design / Wearable Electronic Devices Limits: Humans Language: En Journal: Nature Year: 2024 Document type: Article Affiliation country: Estados Unidos Country of publication: Reino Unido
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Full text: 1 Collection: 01-internacional Database: MEDLINE Main subject: Skin / Transistors, Electronic / Equipment Design / Wearable Electronic Devices Limits: Humans Language: En Journal: Nature Year: 2024 Document type: Article Affiliation country: Estados Unidos Country of publication: Reino Unido