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Flexoelectric Engineering of Bulk Photovoltaic Photodetector.
Yu, Junxi; Huang, Boyuan; Yang, Songjie; Zhang, Yuan; Bai, Yinxin; Song, Chunlin; Ming, Wenjie; Liu, Wenyuan; Wang, Junling; Li, Changjian; Wang, Qingyuan; Li, Jiangyu.
Affiliation
  • Yu J; Institute for Advanced Study, Chengdu University, Chengdu 610100, People's Republic of China.
  • Huang B; Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China.
  • Yang S; Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen, Guangdong 518055, People's Republic of China.
  • Zhang Y; Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China.
  • Bai Y; Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen, Guangdong 518055, People's Republic of China.
  • Song C; Institute for Advanced Study, Chengdu University, Chengdu 610100, People's Republic of China.
  • Ming W; Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China.
  • Liu W; Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China.
  • Wang J; Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen, Guangdong 518055, People's Republic of China.
  • Li C; Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, People's Republic of China.
  • Wang Q; Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China.
  • Li J; Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen, Guangdong 518055, People's Republic of China.
Nano Lett ; 24(21): 6337-6343, 2024 May 29.
Article in En | MEDLINE | ID: mdl-38742772
ABSTRACT
The bulk photovoltaic effect (BPVE) offers an interesting approach to generate a steady photocurrent in a single-phase material under homogeneous illumination, and it has been extensively investigated in ferroelectrics exhibiting spontaneous polarization that breaks inversion symmetry. Flexoelectricity breaks inversion symmetry via a strain gradient in the otherwise nonpolar materials, enabling manipulation of ferroelectric order without an electric field. Combining these two effects, we demonstrate active mechanical control of BPVE in suspended 2-dimensional CuInP2S6 (CIPS) that is ferroelectric yet sensitive to electric field, which enables practical photodetection with an order of magnitude enhancement in performance. The suspended CIPS exhibits a 20-fold increase in photocurrent, which can be continuously modulated by either mechanical force or light polarization. The flexoelectrically engineered photodetection device, activated by air pressure and without any optimization, possesses a responsivity of 2.45 × 10-2 A/W and a detectivity of 1.73 × 1011 jones, which are superior to those of ferroelectric-based photodetection and comparable to those of the commercial Si photodiode.
Key words

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nano Lett Year: 2024 Document type: Article Country of publication: Estados Unidos

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nano Lett Year: 2024 Document type: Article Country of publication: Estados Unidos