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Low Temperature (Down to 6 K) and Quantum Transport Characteristics of Stacked Nanosheet Transistors with a High-K/Metal Gate-Last Process.
Zhu, Xiaohui; Cao, Lei; Wang, Guilei; Yin, Huaxiang.
Affiliation
  • Zhu X; Integrated Circuit Advanced Process R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Cao L; School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing 100049, China.
  • Wang G; Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Yin H; Integrated Circuit Advanced Process R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
Nanomaterials (Basel) ; 14(11)2024 May 23.
Article in En | MEDLINE | ID: mdl-38869541
ABSTRACT
Silicon qubits based on specific SOI FinFETs and nanowire (NW) transistors have demonstrated promising quantum properties and the potential application of advanced Si CMOS devices for future quantum computing. In this paper, for the first time, the quantum transport characteristics for the next-generation transistor structure of a stack nanosheet (NS) FET and the innovative structure of a fishbone FET are explored. Clear structures are observed by TEM, and their low-temperature characteristics are also measured down to 6 K. Consistent with theoretical predictions, greatly enhanced switching behavior characterized by the reduction of off-state leakage current by one order of magnitude at 6 K and a linear decrease in the threshold voltage with decreasing temperature is observed. A quantum ballistic transport, particularly notable at shorter gate lengths and lower temperatures, is also observed, as well as an additional bias of about 1.3 mV at zero bias due to the asymmetric barrier. Additionally, fishbone FETs, produced by the incomplete nanosheet release in NSFETs, exhibit similar electrical characteristics but with degraded quantum transport due to additional SiGe channels. These can be improved by adjusting the ratio of the channel cross-sectional areas to match the dielectric constants.
Key words

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanomaterials (Basel) Year: 2024 Document type: Article Affiliation country: China Country of publication: Suiza

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanomaterials (Basel) Year: 2024 Document type: Article Affiliation country: China Country of publication: Suiza