Self-power, multiwavelength photodetector based on a Sn-doped Ge quantum dots/hexagonal silicon nanowire heterostructure.
Opt Lett
; 49(15): 4066-4069, 2024 Aug 01.
Article
in En
| MEDLINE
| ID: mdl-39090860
ABSTRACT
Tin-doped germanium quantum dots (Sn-doped Ge QDs)-decorated hexagonal silicon nanowires (h-Si NWs) were adopted to overcome the low infrared response of silicon and the excess dark current of germanium. High-quality Sn-doped Ge QDs with a narrow bandgap can be achieved through Ge-Sn co-sputtering on silicon nanowires by reducing the contact area between heterojunction materials and Sn-induced germanium crystallization. The absorption limit of the heterostructure is extended to 2.2â
µm, and it is sensitive to 375-1550â
nm light at 0â
V, which has optimality at 1342â
nm, with a photo-to-dark current ratio of over 815, a responsivity of 0.154â
A/W, and a response time of 0.93â
ms. The superior performance of the Sn-doped Ge QDs/h-Si NW photodetector in multiwavelength is attractive for multi-scenario applications.
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Opt Lett
Year:
2024
Document type:
Article
Country of publication:
Estados Unidos