Photoluminescence study of localization effects induced by the fluctuating random alloy potential in indirect band-gap GaAs1-xPx.
Phys Rev B Condens Matter
; 32(12): 8220-8227, 1985 Dec 15.
Article
in En
| MEDLINE
| ID: mdl-9937002
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Collection:
01-internacional
Database:
MEDLINE
Type of study:
Clinical_trials
Language:
En
Journal:
Phys Rev B Condens Matter
Year:
1985
Document type:
Article
Publication country:
EEUU
/
ESTADOS UNIDOS
/
ESTADOS UNIDOS DA AMERICA
/
EUA
/
UNITED STATES
/
UNITED STATES OF AMERICA
/
US
/
USA