Structural relaxation of Pb defects at the (111)Si/SiO2 interface as a function of oxidation temperature: The Pb-generation-stress relationship.
Phys Rev B Condens Matter
; 48(4): 2418-2435, 1993 Jul 15.
Article
in En
| MEDLINE
| ID: mdl-10008634
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Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Phys Rev B Condens Matter
Year:
1993
Document type:
Article
Country of publication:
United States