Mechanism of interconversion among radiation-induced defects in amorphous silicon dioxide.
Phys Rev Lett
; 86(9): 1777-80, 2001 Feb 26.
Article
in En
| MEDLINE
| ID: mdl-11290246
ABSTRACT
We here present a series of ab initio quantum-chemical calculations on clusters of atoms modeling several oxygen-deficiency-related defects in amorphous silica and illustrate how these defect centers will change their atomic configurations upon photoionization. We first give theoretical evidence that structural conversion from a neutral oxygen monovacancy to a divalent Si defect is possible, explaining the observed photoluminescence properties associated with these defects.
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Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Phys Rev Lett
Year:
2001
Document type:
Article
Affiliation country:
Japan