Direct determination of epitaxial interface structure in Gd2O3 passivation of GaAs.

Yacoby, Yizhak; Sowwan, Mukhles; Stern, Edward; Cross, Julie O; Brewe, Dale; Pindak, Ron; Pitney, John; Dufresne, Eric M; Clarke, Roy

Yacoby, Yizhak; Sowwan, Mukhles; Stern, Edward; Cross, Julie O; Brewe, Dale; Pindak, Ron; Pitney, John; Dufresne, Eric M; Clarke, Roy.

Affiliation

Yacoby Y; Racah Institute of Physics, Hebrew University, Jerusalem, Israel, 91904.

Nat Mater ; 1(2): 99-101, 2002 Oct.

Article in En | MEDLINE | ID: mdl-12618822

Subject(s)

Arsenicals/chemistry; Crystallography, X-Ray/methods; Gadolinium/chemistry; Gallium/chemistry; Materials Testing/methods; Nanotechnology/instrumentation; Crystallization/methods; Crystallography, X-Ray/instrumentation; Electrons; Materials Testing/instrumentation; Molecular Conformation; Molecular Structure; Nanotechnology/methods; Semiconductors; Surface Properties

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Collection: 01-internacional Database: MEDLINE Main subject: Arsenicals / Materials Testing / Crystallography, X-Ray / Nanotechnology / Gadolinium / Gallium Type of study: Prognostic_studies Language: En Journal: Nat Mater Journal subject: CIENCIA / QUIMICA Year: 2002 Document type: Article Country of publication: United kingdom

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