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Hourglass SiO2 coating increases the performance of planar patch-clamp.
J Biotechnol ; 125(1): 142-54, 2006 Aug 20.
Article in En | MEDLINE | ID: mdl-16595156
ABSTRACT
Obtaining high-throughput electrophysiological recordings is an ongoing challenge in ion channel biophysics and drug discovery. One particular area of development is the replacement of glass pipettes with planar devices in order to increase throughput. However, successful patch-clamp recordings depend on a surface coating which ideally should promote and stabilize giga-seal formation. Here, we present data supporting the use of a structured SiO(2) coating to improve the ability of cells to form a "seal" with a planar patch-clamp substrate. The method is based on a correlation study taking into account structure and size of the pores, surface roughness and chip capacitance. The influence of these parameters on the quality of the seal was assessed. Plasma-enhanced chemical vapour deposition (PECVD) of SiO(2) led to an hourglass structure of the pore and a tighter seal than that offered by a flat, thermal SiO(2) surface. The performance of PECVD chips was validated by recording recombinant potassium channels, BK(Ca), expressed in stable HEK-293 cell lines and in inducible CHO cell lines and low conductance IRK1, and endogenous cationic currents from CHO cells. This multiparametric investigation led to the production of improved chips for planar patch-clamp applications which allow electrophysiological recordings from a wide range of cell lines.
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Collection: 01-internacional Database: MEDLINE Main subject: Silicon Dioxide / Patch-Clamp Techniques / Ion Channels Limits: Animals / Humans Language: En Journal: J Biotechnol Journal subject: BIOTECNOLOGIA Year: 2006 Document type: Article Affiliation country: France
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Collection: 01-internacional Database: MEDLINE Main subject: Silicon Dioxide / Patch-Clamp Techniques / Ion Channels Limits: Animals / Humans Language: En Journal: J Biotechnol Journal subject: BIOTECNOLOGIA Year: 2006 Document type: Article Affiliation country: France