Less strain energy despite fewer misfit dislocations: the impact of ordering.
Phys Rev Lett
; 96(6): 066101, 2006 Feb 17.
Article
in En
| MEDLINE
| ID: mdl-16606012
ABSTRACT
The average strain state of Ge films grown on Si(111) by surfactant mediated epitaxy has been compared to the ordering of the interfacial misfit dislocation network. Surprisingly, a smaller degree of average lattice relaxation was found in films grown at higher temperature. On the other hand, these films exhibit a better ordered dislocation network. This effect energetically compensates the higher strain at higher growth temperature, leading to the conclusion that, apart from the formation of misfit dislocations, their ordering represents an important channel for lattice-strain energy relaxation.
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Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Phys Rev Lett
Year:
2006
Document type:
Article
Affiliation country:
Germany