Sensitivity and dynamic range of FGMOS dosemeters.
Radiat Prot Dosimetry
; 122(1-4): 460-2, 2006.
Article
in En
| MEDLINE
| ID: mdl-17387126
ABSTRACT
UVPROM memory devices employing FGMOS transistors as memory cells make excellent dosemeters for applications involving ionising radiation. With proper preparation and programming, these devices can be used in remote-sensing applications in high-radiation environments with no power required during exposure.
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Collection:
01-internacional
Database:
MEDLINE
Main subject:
Radiometry
/
Transistors, Electronic
/
Nanotechnology
Type of study:
Diagnostic_studies
/
Evaluation_studies
Language:
En
Journal:
Radiat Prot Dosimetry
Year:
2006
Document type:
Article
Affiliation country:
United States