Sensitivity and dynamic range of FGMOS dosemeters.

McNulty, P J; Poole, Kelvin F; Crissler, M; Reneau, J; Cellere, G; Paccagnella, A; Visconti, A; Bonanomi, M; Stroebel, Dave; Fennell, Michael; Perez, Roger

McNulty, P J; Poole, Kelvin F; Crissler, M; Reneau, J; Cellere, G; Paccagnella, A; Visconti, A; Bonanomi, M; Stroebel, Dave; Fennell, Michael; Perez, Roger.

Affiliation

McNulty PJ; Clemson University, Clemson, SC 29634-0978, USA. mpeter@clemson.edu

Radiat Prot Dosimetry ; 122(1-4): 460-2, 2006.

Article in En | MEDLINE | ID: mdl-17387126

ABSTRACT

ABSTRACT

UVPROM memory devices employing FGMOS transistors as memory cells make excellent dosemeters for applications involving ionising radiation. With proper preparation and programming, these devices can be used in remote-sensing applications in high-radiation environments with no power required during exposure.

Subject(s)

Nanotechnology/instrumentation; Radiometry/instrumentation; Transistors, Electronic; Dose-Response Relationship, Radiation; Equipment Design; Equipment Failure Analysis; Miniaturization; Nanotechnology/methods; Radiation Dosage; Radiometry/methods; Reproducibility of Results; Sensitivity and Specificity

Search on Google

Add to My VHL

XML

PubMed Links

Collection: 01-internacional Database: MEDLINE Main subject: Radiometry / Transistors, Electronic / Nanotechnology Type of study: Diagnostic_studies / Evaluation_studies Language: En Journal: Radiat Prot Dosimetry Year: 2006 Document type: Article Affiliation country: United States

Search on Google

Add to My VHL

XML

PubMed Links