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Independently switchable atomic quantum transistors by reversible contact reconstruction.
Xie, F Q; Maul, R; Augenstein, A; Obermair, C; Starikov, E B; Schön, G; Schimmel, T; Wenzel, W.
Affiliation
  • Xie FQ; Institut für Angewandte Physik, DFG-Center for Functional Nanostructures, Universität Karlsruhe, 76128 Karlsruhe, Germany.
Nano Lett ; 8(12): 4493-7, 2008 Dec.
Article in En | MEDLINE | ID: mdl-19367974
ABSTRACT
The controlled fabrication of actively switchable atomic-scale devices, in particular transistors, has remained elusive to date. Here, we explain the operation of an atomic-scale three-terminal device by a novel switching mechanism of bistable, self-stabilizing reconstruction of the electrode contacts at the atomic level While the device is manufactured by electrochemical deposition, it operates entirely on the basis of mechanical effects of the solid-liquid interface. We analyze mechanically and thermally stable metallic junctions with a predefined quantized conductance of 1-5 G0 in experiment and atomistic simulation. Atomistic modeling of structural and conductance properties elucidates bistable electrode reconstruction as the underlying mechanism of the device. Independent room temperature operation of two transistors at low voltage demonstrates intriguing perspectives for quantum electronics and logics on the atomic scale.

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nano Lett Year: 2008 Document type: Article Affiliation country: Germany Country of publication: EEUU / ESTADOS UNIDOS / ESTADOS UNIDOS DA AMERICA / EUA / UNITED STATES / UNITED STATES OF AMERICA / US / USA

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nano Lett Year: 2008 Document type: Article Affiliation country: Germany Country of publication: EEUU / ESTADOS UNIDOS / ESTADOS UNIDOS DA AMERICA / EUA / UNITED STATES / UNITED STATES OF AMERICA / US / USA