Fabrication and characteristics of broad-area light-emitting diode based on nanopatterned quantum dots.
Nanotechnology
; 20(3): 035302, 2009 Jan 21.
Article
in En
| MEDLINE
| ID: mdl-19417291
ABSTRACT
The device fabrication and integration of nanopatterned quantum dots (PQDs) are realized through the demonstration of a broad-area light-emitting diode with PQD active region. The device involves two growth processes, first to form PQDs by selective-area epitaxy on an SiO(2) mask and then to complete the device structure after mask removal. Linear current-voltage characteristics are observed with sharp turn-on, low leakage current and low forward resistance. Electroluminescence spectra show PQD intraband structure and low quenching of emission from 77 K to room temperature. Light-current measurements demonstrate external quantum efficiency per PQD comparable to self-assembled QDs, thus providing a possible route toward individually addressable single QD devices.
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Type of study:
Clinical_trials
Language:
En
Journal:
Nanotechnology
Year:
2009
Document type:
Article
Affiliation country:
United States