1-W antimonide-based vertical external cavity surface emitting laser operating at 2-microm.
Opt Express
; 14(14): 6479-84, 2006 Jul 10.
Article
in En
| MEDLINE
| ID: mdl-19516826
ABSTRACT
We report a high-power optically pumped semiconductor vertical external cavity surface emitting laser operating at 2-mum wavelength. The gain material consisted of 15 GaInSb quantum-wells placed within a three-lambda GaSb cavity and grown on the top of an 18-pairs AlAsSb/GaSb Bragg reflector. For thermal management we have used a transparent diamond heat spreader bonded on the top of the structure. When cooled down to 5 degrees C, the laser emitted up to 1 W of optical power in a nearly diffraction-limited Gaussian beam demonstrating the high potential of antimonide material for VECSEL fabrication.
Search on Google
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Opt Express
Journal subject:
OFTALMOLOGIA
Year:
2006
Document type:
Article