Comparison of epitaxial graphene on Si-face and C-face 4H SiC formed by ultrahigh vacuum and RF furnace production.

Jernigan, Glenn G; VanMil, Brenda L; Tedesco, Joseph L; Tischler, Joseph G; Glaser, Evan R; Davidson, Anthony; Campbell, Paul M; Gaskill, D Kurt

Jernigan, Glenn G; VanMil, Brenda L; Tedesco, Joseph L; Tischler, Joseph G; Glaser, Evan R; Davidson, Anthony; Campbell, Paul M; Gaskill, D Kurt.

Affiliation

Jernigan GG; US Naval Research Laboratory, Electronics Science and Technology Division Code 6800, 4555 Overlook Avenue SW, Washington, DC 20375, USA. glenn.jernigan@nrl.navy.mil

Nano Lett ; 9(7): 2605-9, 2009 Jul.

Article in En | MEDLINE | ID: mdl-19583281

Subject(s)

Carbon/chemistry; Graphite/chemistry; Radio Waves; Silicon/chemistry; Graphite/chemical synthesis; Graphite/classification; Hot Temperature; Microscopy, Atomic Force/methods; Spectrum Analysis/methods; Vacuum

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Full text: 1 Collection: 01-internacional Database: MEDLINE Main subject: Radio Waves / Silicon / Carbon / Graphite Language: En Journal: Nano Lett Year: 2009 Document type: Article Affiliation country: United States

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